Performance And Solidity Schema For NAND Flash Memory-Based Solid State Disk

AHMED I N, ALSALIBI and PUTRA, SUMARI (2014) Performance And Solidity Schema For NAND Flash Memory-Based Solid State Disk. In: Performance And Solidity Schema For NAND Flash Memory-Based Solid State Disk, 20 - 21 December, 2014, Kuala Lumpur, Malaysia.

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Abstract

significant attention has been paid to the Flash Memory based Solid State Drive (SSD) which made replacing the existing HDD, used as a storage unit across the world, very possible. Different from traditional disks, SSD uses semiconductor chips to store data. This structure enjoys very original technical characteristics including Low power consumption, shock resistance and high performance in random access. Those features can overcome the shortcomings of magnetic disks. Moreover, SSD is a complex storage system with its own features. Flash memory, the basic unit of SSD, has many distinctive characteristics that lead to various challenges. Flash memory doesn't support a write operation feature. A write operation can only be performed on an empty or erased unit which makes it more time-consuming. Besides, flash memory has a limited number of erase cycles. Moreover, each storage unit has limited number of erase cycles. In this paper, we propose an efficient schema called Performance and Solidity (PSS) to overcome the challenges, improve reliability and to enhance its performance by using wear leveling and organizing data based on access patterns. To prove the validity of PSS, both DiskSim and FlashSim simulators was used to evaluate the performance of the PSS and compare the results with other algorithms. Experimental results show that PSS performs better than the existing algorithms in terms of valid data distribution overhead and erase count distribution.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: NAND Flash Memory, SSD, Wear Leveling
Depositing User: Mr. John Steve
Date Deposited: 26 Apr 2019 12:12
Last Modified: 26 Apr 2019 12:12
URI: http://publications.theired.org/id/eprint/1584

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