Effect of pressure on electrical resistance of SnSeRex (x=0.1, 0.2, 0.3, 0.4) (DVT) grown crystals

G. K., SOLANKI and PRATIK, PATANIYA and TRUPTI, PATEL and VIMAL, S. JOSHI (2015) Effect of pressure on electrical resistance of SnSeRex (x=0.1, 0.2, 0.3, 0.4) (DVT) grown crystals. In: Second International Conference on Advances in Applied Science and Environmental Technology - ASET 2015, 28-29 August, 2015, Bangkok, Thailand.

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Abstract

Rhenium dopped Tin monoselenide crystals have been grown by Direct Vapour Transport (DVT) technique using two zone horizontal furnace by trial and error method. The results of electrical resistance measurements under pressure on single crystals of SnSeRex (x = 0.1, 0.2, 0.3, 0.4) (DVT) are reported. Measurements up to 4GPa are carried out using Bridgman anvil set up. There is no clear indication of any phase transition till the highest pressure is reached in these measurements.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Crystal growth, Bridgman anvil, high pressure resistance
Depositing User: Mr. John Steve
Date Deposited: 27 Apr 2019 06:34
Last Modified: 27 Apr 2019 06:34
URI: http://publications.theired.org/id/eprint/1596

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