Towards Lasing on a Silicon chip: Gallium and Its Alloy or Rare Earth Doped Gallium Nitride as the Solution?

IVAN, GLESK and MD SHAKIL, AHMED (2015) Towards Lasing on a Silicon chip: Gallium and Its Alloy or Rare Earth Doped Gallium Nitride as the Solution? In: Third International Conference on Advances in Computing, Communication and Information Technology- CCIT 2015, 26 - 27 May,2015, Birmingham B42 2SU, UNITED KINGDOM.

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Abstract

Achieving effective solution for lasing on Silicon is a critical and important step for the successful implementation of Photonic Integrated Circuits in our quest to develop the next generation of ultrahigh bandwidth communication devices. In this overview paper various options of hybrid, monolithic and rare earth doping are discussed with the aim to offer the latest state-of-the-art on this topic. Monolithic integration of particular composition of Gallium and its alloys having the direct bandgap property and lattice constant similarity with silicon has been shown as promising. This is then compared with a Rare Earth doped Gallium Nitride approach as another possibility for the ‘lasing on silicon’ solution.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: gallium alloys, lasing on silicon, integrated optics, telecommunication
Depositing User: Mr. John Steve
Date Deposited: 29 Apr 2019 11:45
Last Modified: 29 Apr 2019 11:45
URI: http://publications.theired.org/id/eprint/1697

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