A Proposed Mechanism for the Thickening Behavior of SiC– Polyethylene Glycol Abrasive Slurry during Silicon Ingot Slicing into Wafers for Photovoltaic Applications

RONALD ALLAN S. DE, LOS REYES (2015) A Proposed Mechanism for the Thickening Behavior of SiC– Polyethylene Glycol Abrasive Slurry during Silicon Ingot Slicing into Wafers for Photovoltaic Applications. In: Third International Conference on Advances in Mechanical, Aeronautical and Production Techniques - MAPT 2015, 11-12 APRIL 2015, Kuala Lumpur, Malaysia.

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Abstract

The present study presents a mechanism to account for the transformation of silicon carbide – polyethylene glycol abrasive slurries into thick slurries. Based on comparative observations and the results of other workers, it is proposed that the thickening behavior is the result of siloxane bonds forming bridges that connect the kerf or silicon particles which eventually increases the density of the slurry. It is further suggested that the source for this reaction would be the polyethylene glycol itself due to its possible degradation into smaller compounds after repeated use in the cutting operation.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: SiC, PEG, thick, slurry, silicon, photovoltaic (key words)
Depositing User: Mr. John Steve
Date Deposited: 04 May 2019 12:24
Last Modified: 04 May 2019 12:24
URI: http://publications.theired.org/id/eprint/1905

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