74V High Figure-of-Merit Lateral Trench Gate Power MOSFET on InGaAs

MUKESH, BADIYARI, and YASHVIR, SINGH (2014) 74V High Figure-of-Merit Lateral Trench Gate Power MOSFET on InGaAs. In: International Conference on Advances In Engineering And Technology - ICAET 2014, 24 - 25 May, 2014, RIT, Roorkee, India.

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In this paper, a power lateral trench-gate metal oxide-semiconductor field-effect transistor (MOSFET) on InGaAs is proposed. The device consists of two gates placed vertically in separate trenches built in the drift region on both sides of P body region. Under ON-state, two channels are created in P-body which carry current simultaneously to enhance performance of the device. The trench structure of the proposed device causes reduced-surface-field effect in the drift region to improved breakdown voltage. The device design also provides a reduction in cell pitch and higher drift region doping to decrease the on-resistance. Two-dimensional numerical simulations are performed to analyze and compare the performance of proposed device with that of the conventional MOSFET. The proposed MOSFET structure gives 80% higher breakdown voltage, 17% lower specific on-resistance, 25% reduction in cell pitch and 3.8 times improvement in figure-of-merit over the conventional device.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Power MOSFET, InGaAs, trench-gate, breakdown voltage, on-resistance, figure-of-merit
Depositing User: Mr. John Steve
Date Deposited: 21 May 2019 11:44
Last Modified: 21 May 2019 11:44
URI: http://publications.theired.org/id/eprint/2616

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