Surface treatment of gate insulating film for organic thin film transistor in plasma nitridation treatment

Akihito, Matsushita and Kabuto, Hori and Keiichirou, Minakuchi and TOMO, UENO and YOSHITAKA, IWAZAKI (2019) Surface treatment of gate insulating film for organic thin film transistor in plasma nitridation treatment. In: 8th International Conference on Advances in Computing, Electronics and Communication - ACEC, 12 -13 January 2019, Kuala Lumpur, Malaysia.

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Abstract

The organic thin film transistor (OTFT) has been attractive as soft material for IoT devices, however there are some problems to overcome. One is the exitance of carrier traps at the interface between the organic semiconductor and the oxide film of the OTFT. The cause of this carrier trap is the presence of OH groups generated by the adsorption of water molecules in the air and O atoms on the surface of the oxide film. As a method for removing this OH group, generally, the formation of SAM films on the oxide layer has been attempted, but there are disadvantages such as requiring dense film forming conditions and spending a long time for the film formation. In this study, we have tried to remove OH group and suppress the generation of additional carrier trap by surface treatment of gate insulation film in plasma nitridation process. From the results of TDS measurement and C-V measurement, it was confirmed that OH group on the surface of the gate insulating film can be removed and additional OH group formation can be suppressed. Improvement of transistor characteristics by plasma nitridation treatment was also confirmed in I-V measurement. As a result, it was confirmed that plasma nitridation treatment is an effective means as the surface treatment method for the gate insulating films.

Item Type: Conference or Workshop Item (Paper)
Depositing User: Mr. John Steve
Date Deposited: 06 Mar 2019 07:35
Last Modified: 06 Mar 2019 09:11
URI: http://publications.theired.org/id/eprint/28

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