An Analytic Potential Solution to Ge/Si Core/Shell Field effect Metal-Oxide-Semiconductor Structure

LINING, ZHANG and CAIXIA, DU and JIN, HE and JIN, YANG and MANSUN, CHAN and WANNING, DENG, and WEI, ZHAO and WEN, WU and WENGPING, WANG and YUN, YE (2014) An Analytic Potential Solution to Ge/Si Core/Shell Field effect Metal-Oxide-Semiconductor Structure. In: International Conference on Advances In Computing, Electronics and Electrical Technology CEET 2014, 02 - 03 August, 2014, Kuala Lumpur, Malaysia.

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Abstract

Radial core/shell hetero field effect metal-oxide-semiconductor structures, especially Ge/Si core/shell structure, have recently been extensively studied both experimentally and theoretically, promising novel electronic and optoelectronic devices. An analytic electrostatic potential solution to this hetero-structure is developed in this letter. The analytical expression of the electrostatic potential is derived out from the basic Poisson Boltzmann equation in the core/shell layers under classical device physics. Potential and electric field distribution across the radial of the core/shell structure are analyzed and discussed in the detail, much different from their single component counterpart. The analytic solution presented in this letter has provided useful insight for device scientists and integrated circuit engineers to understand the device physics and further develop compact circuit models of nano-wire field effect transistors with the Ge/Si core/shell hetero-structure for possible circuit application.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: CMOS scaling, nanowire device, integrated circuit, hetero-junction structure, device physics, simulation and modeling
Depositing User: Mr. John Steve
Date Deposited: 27 May 2019 12:13
Last Modified: 27 May 2019 12:13
URI: http://publications.theired.org/id/eprint/2801

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