RF and Noise performance exploration of Double Gate FinFET

K. P., PRADHAN and P. K, SAHU (2017) RF and Noise performance exploration of Double Gate FinFET. In: Sixth International Conference on Advances in Computing, Control and Networking - ACCN 2017, 25-26 February 2017, Bangkok, Thailand.

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Double Gate FinFET devices are suitable for nano electronic circuits due to better scalability, higher on-current (Ion), improved Sub-threshold Slope (SS) and undoped body (no random dopant fluctuation). Body thickness (TSi) increases the gate control over the channel resulting in reduced short channel effects (SCEs). Thin Tsi increases the quantum confinement of charge, resulting increased threshold-voltage (Vth), and hence, reduced performance. In this work, we have varied the process parameters like channel length (Lg) in presence of noise and analyzed various parameters. Significant variation in the noise spectral density has been observed, which is related to the random occurrence of excess Lorentzian components (1/f2-like nature) associated with generation–recombination (GR) noise.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: Double Gate FinFET, Sub-threshold Slope (SS), short channel effects (SCEs), Quantum confinement, noise spectral density.
Depositing User: Mr. John Steve
Date Deposited: 18 Mar 2019 05:31
Last Modified: 18 Mar 2019 05:31
URI: http://publications.theired.org/id/eprint/562

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